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200V 25A 144W Integrated Circuit IC Chip , IRFB5620PBF N Channel Mosfet Through Hole TO-220AB

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Shenzhen Koben Electronics Co., Ltd.

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Brand Name : IOR

Model Number : IRFB5620PBF

Certification : ROHS

Place of Origin : CHINA

MOQ : 20pcs

Price : negotiate

Payment Terms : Western Union, T/T,Paypal

Supply Ability : Consultation

Delivery Time : 2-3 working days

Packaging Details : 50PCS/Standard Package

FET Type : N-Channel

Drain to Source Voltage (Vdss) : 200V

Drive Voltage : 10V

Operating Temperature : -55°C ~ 175°C

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IRFB5620PBF N-Channel MOSFET 200V 25A 144W Through Hole TO-220AB

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	72.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 50V
FET Feature	-
Power Dissipation (Max)	144W (Tc)
Operating Temperature	-55°C ~ 175°C

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Product Tags:

resolver to digital converter ic

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